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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4029 DESCRIPTION With TO-3PL package Complement to type 2SA1553 APPLICATIONS Power amplifier applications Recommended for 120W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PL) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open emitter Open base Open collector CONDITIONS OND IC TOR UC VALUE 230 230 5 15 1.5 UNIT V V V A A W ae ae Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 150 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IC=8A ;IB=0.8A IC=7A ; VCE=5V VCB=230V IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IC=1A ; VCE=5V f=1MHz;VCB=10V 55 35 MIN 230 2SC4029 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V 3.0 1.5 5 5 160 |I |I V V A A hFE-1 classifications R 55-110 IN Collector output capacitance 80-160 ANG CH O MIC E SE DUC ON 270 TOR 30 MHz pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4029 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.50 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4029 CHA IN E SEM NG OND IC TOR UC 4 |
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